Samsung on Monday unveiled a prototype for what could one day become a less expensive substitute for flash memory and at the same time touted a healthy flash memory market with high demand and prices to match. The South Korea firm’s new technology — phase-change random access memory — could eventually displace existing NOR flash technology with smaller size chips, increased efficiency and better performance. PRAM is viewed as a next-generation version of non-volatile flash memory that will serve in new mobile computing, entertainment and other handheld electronics.
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Samsung Lifts Lid on Next-Gen Memory Tech
Posted by: Jay Lyman September 11, 2006 02:05 PMSamsung on Monday unveiled a prototype for what could one day become a less expensive substitute for flash memory and at the same time touted a healthy flash memory market with high demand and prices to match. The South Korea firm’s new technology — phase-change random access memory — could eventually displace existing NOR flash technology with smaller size chips, increased efficiency and better performance. PRAM is viewed as a next-generation version of non-volatile flash memory that will serve in new mobile computing, entertainment and other handheld electronics.