In the ever-intensifying race to deliver the most memory in the tiniest chip, SanDisk on Tuesday rolled out its 8-gigabit, 56 nanometer NAND flash technology and promised to deliver a 16-gigabit version in the second quarter. Both versions of the 56 nm chip use multilevel cell technology to pack more capacity into a smaller space than has been possible before. The flash chips will initially be produced at Fab 3, the 300 mm wafer fabrication facility at Toshiba’s Yokkaichi Operations near Nagoya, Japan.
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SanDisk, Toshiba Unveil 56 Nanometer NAND Flash Chips
Posted by: Katherine Noyes January 24, 2007 02:27 PMIn the ever-intensifying race to deliver the most memory in the tiniest chip, SanDisk on Tuesday rolled out its 8-gigabit, 56 nanometer NAND flash technology and promised to deliver a 16-gigabit version in the second quarter. Both versions of the 56 nm chip use multilevel cell technology to pack more capacity into a smaller space than has been possible before. The flash chips will initially be produced at Fab 3, the 300 mm wafer fabrication facility at Toshiba’s Yokkaichi Operations near Nagoya, Japan.