Intel and Numonyx on Wednesday announced what they categorized as a “key breakthrough” in research on phase change memory. Their researchers demonstrated a 64Mb test chip that lets manufacturers stack multiple layers of PCM arrays within one die. This could lead to the creation of smaller memory devices with more capacity and lower power consumption for RAM and storage. The development is the result of joint research between Numonyx and Intel focusing on multi-layered or stacked PCM cell arrays.
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Intel Boasts Breakthrough in Durable Multilayer Memory
Posted by: Richard Adhikari October 29, 2009 11:43 AMIntel and Numonyx on Wednesday announced what they categorized as a “key breakthrough” in research on phase change memory. Their researchers demonstrated a 64Mb test chip that lets manufacturers stack multiple layers of PCM arrays within one die. This could lead to the creation of smaller memory devices with more capacity and lower power consumption for RAM and storage. The development is the result of joint research between Numonyx and Intel focusing on multi-layered or stacked PCM cell arrays.