Intel has reported a major technological breakthrough in microprocessor development: the world’s first 3D transistor. The Tri-Gate transistor will continue the steady delivery of computing products that are ever more powerful, ever cheaper and ever smaller, the company said. What Intel has done is reinvent the transistor structure by using a a thin three-dimensional silicon fin that rises up vertically from the silicon substrate, unlike the two-dimensional planar transistor structure currently in use. Intel has also previewed a 22-nanometer node microprocessor that will be the first high-volume chip to use Tri-Gate.
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Intel Busts Out of the Gate With 3D Transistor
Posted by: Erika Morphy May 4, 2011 03:47 PMIntel has reported a major technological breakthrough in microprocessor development: the world’s first 3D transistor. The Tri-Gate transistor will continue the steady delivery of computing products that are ever more powerful, ever cheaper and ever smaller, the company said. What Intel has done is reinvent the transistor structure by using a a thin three-dimensional silicon fin that rises up vertically from the silicon substrate, unlike the two-dimensional planar transistor structure currently in use. Intel has also previewed a 22-nanometer node microprocessor that will be the first high-volume chip to use Tri-Gate.